Reliability based design optimization applied to the high electron mobility transistor (HEMT)
نویسندگان
چکیده
Among the most important components in complex and high-power mechatronic systems is transistor. The High Electron Mobility Transistor (HEMT) a technology under development. This paper presents hybrid Reliability Based Design Optimization (RBDO) method applied to HEMT order improve its performance reliability. execution of RBDO processes requires development coupling two models: finite element model using Comsol multiphysics® software by Matlab® software. first used simulate electro-thermomechanical behavior components. second solve optimization problem with model. After application this process, it was possible determine optimal values design variables which allows optimizing multiphysics structure reliability level HEMT.
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ژورنال
عنوان ژورنال: Microelectronics Reliability
سال: 2021
ISSN: ['0026-2714', '1872-941X']
DOI: https://doi.org/10.1016/j.microrel.2021.114299