Reliability based design optimization applied to the high electron mobility transistor (HEMT)

MOCVD growth of GaN-based high electron mobility transistor structures

Gallium Nitride High Electron Mobility Transistor (GaN-HEMT) Technology for High Gain and Highly Efficient Power Amplifiers

The ubiquitous network society is evolving at an accelerated pace using various mobile communication tools, especially mobile phones. The driving force behind such a rapid development of the network is the rise in requirements of various bandwidth sensitive user applications. This leads to a demand for large capacity mobile communications, with availability anytime, anywhere and with anything. ...

Effect of Li Ion Irradiation on Reliability of AlGaAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor

AlGaAs/InGaAs/GaAs pHEMT (pseudomorphic high electron mobility transistors) materials and devices have been studied with 20MeV Li ions irradiation at two different fluences. The structural and electrical characteristics have been studied and compared before and after the irradiation. It has been found that with the irradiation FWHM of the material not changes as confirmed with x-ray rocking cur...

Surface morphology of Al0.3Ga0.7N/Al2O3-high electron mobility transistor structure.

We present surface properties of buffer films (AIN and GaN) and Al0.3Gao.zN/Al2O3-High Electron Mobility Transistor (HEMT) structures with/without AIN interlayer grown on High Temperature (HT)-AIN buffer/Al2O3 substrate and Al2O3 substrate. We have found that the GaN surface morphology is step-flow in character and the density of dislocations was about 10(8)-10(9) cm(-2). The AFM measurements a...

Optimization of Ohmic Contact Metallization Process for AlGaN/GaN High Electron Mobility Transistor

Copyright 2013 KIEEME. All rights reserved. This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0) which permits unrestricted noncommercial use, distribution, and reproduction in any medium, provided the original work is properly cited. Optimization of Ohmic Contact Metallization Proc...